Low Temperature Polysilicon Technology for Advanced Display Systems
نویسنده
چکیده
In this paper I review research and development in the area of low temperature polysilicon (p-Si) formation for application in advanced display systems. A brief introduction to the scope of these efforts and the market for this technology is given, followed by a presentation of the methods that are being developed to meet these objectives. The technical merits and demerits of various approaches for low-temperature p-Si formation are reviewed on the basis of current studies, and an attempt is made to extrapolate trends and suggest solutions for the technical difficulties that currently plague the development of a manufacturing-compatible process.
منابع مشابه
Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملEffect of Temperature on Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells
Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the phosphorous spin-on diffusion technique, have been studied. The current density–voltagecharacteristics of polycrystalline silicon solar cells were measured in dark at different temperaturelevels. For this purpose, a diode equivalent model was used to obtain saturation current densi...
متن کاملESD robustness of thin-film devices with different layout structures in LTPS technology
The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental resul...
متن کاملElectrical properties of interlevel deposited oxides related to polysilicon preparation
Few papers investigated the electrical properties of interlevel high temperature oxides low pressure chemically vapour deposited (LPCVD HTO) Si02. Silicon dioxide obtained by the surface reaction between SiH,Cl, and N,O at 900°C on LPCVD polysilicon shows lower electrical conductivity in comparison to SiO, thermally grown on polysilicon. It was demonstrated a FowlerNordheim mechanism for the el...
متن کاملA dynamic-logic PLA on low-temperature polysilicon TFT technology
Motivated by improvements in low-temperature polysilicon thin-film transistor (LTPS-TFT) processes, we designed a TFT-based dynamic-logic programmable logic array (PLA). We report the successful operation of the circuit with high repeatability. We thus demonstrate that the LTPS-TFT technology is mature enough to support aggressive circuit techniques such as dynamic logic.
متن کامل